弹性形变下溅射Al膜p-Si晶体近表面层的电物理特性
Electrophysical characteristics of near-surface layers in p-Si crystals with sputtered Al films and subjected to elastic deformation
摘要：
在p-Si晶体的（111）面上沉积Al膜，会引起晶体近表层的形变。提供的晶体应变是弹性的和单轴的，在近表面层中的缺陷的吸杂被观察到，这是确认的试样电阻的弹性应变大小的依赖性的变化。根据变形层与位错之间的相互作用能，计算了缺陷俘获的最大深度。
英文摘要：
The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer is observed, which is confirmed by a change in the dependence of the specimen resistance on the elastic strain magnitude. The maximum depth of the defect capture has been calculated on the basis of the energy of interaction between the deformed layer and dislocations.
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