Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the one-picosecond period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.
We study the origin of the step-like shoulder on the high energy side of the low temperature photoluminescence spectrum of heavily $p$-doped GaAs. We show experimentally that it is controlled by the Fermi-Dirac distribution of the holes and by the energy distribution of the photoexcited electrons showing a sharp step-like dependence. This step is attributed to the percolation threshold in the conduction band separating localized from delocalized electron states. A comprehensive set of optical techniques based on spin orientation of electrons, namely the Hanle effect, time- and polarization-res…
Resonant Photoluminescence of Quantum Incompressible Liquids
Institute of Solid State Physics named after Yu. A. Osipyan, Russian Academy of Sciences（俄罗斯科学院奥西普扬固体物理研究所）；Moscow Institute of Physics and Technology（莫斯科物理技术学院）；Braun Center for Submicron Research, Weizmann Institute of Science（魏茨曼科学研究所微纳研究中心）
Strongly quantum-confined 2D colloidal PbS nanoplatelets (NPLs) are highly interesting materials for near-infrared optoelectronic applications. Here, we use ultrafast transient optical absorption spectroscopy to study the characteristics and dynamics of photoexcited excitons in ultrathin PbS NPLs with a cubic (rock-salt) structure. The NPLs are synthesized at near room temperature from lead oleate and thiourea precursors and show an optical absorption onset at 680 nm (1.8 eV) as well as photoluminescence at 720 nm (1.7 eV). By treating PbS NPLs with CdCl2 in a post-synthetic step, their photol…
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band…
Biexcitons have been considered as one of the fundamental building blocks for quantum technology because of its overwhelming advantages in generating entangled photon pairs. Although many-body complexes have been demonstrated recently in mono-layer transition metal dichalcogenides (TMDs), the low emission efficiency and scale up capability hinder their applications. Colloidal nanomaterials, with high quantum efficiency and ease of synthesis/processing, are regarded to be an appealing complement to TMDs for biexciton sources. However, a progress towards biexciton emission in colloidal nanomater…
The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum photonic architectures. Here, we demonstrate that QDs can be deterministically positioned in nanophotonic waveguides by pre-locating QDs relative to a global reference frame using micro-photoluminescence ($μ$PL) spectroscopy. After nanofabrication, $μ$PL images reveal misalignments between the central axis of the waveguide and the embedded QD of only $(9\pm46$) nm and $(1\pm33$) nm, for QDs embedded in undoped and doped membranes, respectivel…
