Geant4在模拟半导体粒子探测器在低于1 MeV能区响应中的性能
Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
摘要：
Geant 4模拟在分析和解释实验中起着至关重要的作用，提供了标准模型的低能量精度测试。本文着重于在100和1000 keV之间的能量范围内的电子过程的描述的准确性。研究了不同的模拟参数和多次散射模型对后向散射系数的影响。模拟了HPGe和钝化注入平面Si探测器对β粒子的响应，并与实验结果进行了比较。Geant4模拟和实验数据之间的整体良好的协议。
英文摘要：
Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to β particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.
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