arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1306.4428cond-mat.mes-hall

Dephasing of Si singlet-triplet qubits due to charge and spin defects

Dimitrie Culcer, Neil M. Zimmerman

英文摘要:

We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates $Γ_ϕ$ due to various classes of defects to experimentally measurable parameters such as charge dipole moment, spin dipole moment and fluctuator switching times. We find that charge fluctuators are more efficient in causing dephasing than spin fluctuators.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑