人工双原子分子中少电子态的激发光谱
Excitation spectroscopy of few-electron states in artificial diatomic molecules
摘要：
研究了少电子平行耦合双量子点的激发光谱。通过对双量子点（DQD）施加有限的源漏电压，在非平衡充电图中观察到的第一激发态可以根据DQD中的总有效电子数分为两类，假设有核填充。当存在奇数（偶数）个电子时，观察到一个（两个）电子反键（三重态）状态作为第一激发态。另一方面，在一个较大的源漏电压，我们观察到较高的激发态，其中涉及额外的单粒子激发能级。最后，我们确定的激发态的计算使用哈伯德模型，特别是，我们阐明了四重态，这是通常禁止的自旋封锁所造成的选择规则。
英文摘要：
We study the excitation spectroscopy of few-electron, parallel coupled double quantum dots (QDs). By applying a finite source drain voltage to a double QD (DQD), the first excited states observed in nonequilibrium charging diagrams can be classified into two kinds in terms of the total effective electron number in the DQD, assuming a core filling. When there are an odd (even) number of electrons, one (two)-electron antibonding (triplet) state is observed as the first excited state. On the other hand, at a larger source drain voltage we observe higher excited states, where additional single-particle excited levels are involved. Eventually, we identify the excited states with a calculation using the Hubbard model and, in particular, we elucidate the quadruplet state, which is normally forbidden by the spin blockade caused by the selection rule.
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