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arXiv 1306.2994physics.optics
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克服高品质因数环形谐振器的Si3N4薄膜应力限制

Overcoming Si3N4 film stress limitations for High Quality factor ring resonators

Kevin Luke, Avik Dutt, Carl B. Poitras, Michal Lipson

摘要:

氮化硅(Si 3 N4)环形谐振器对于各种光子器件至关重要。然而,氮化硅固有的高膜应力限制了环形谐振器的光学限制和品质因数(Q)。我们表明,在氮化硅薄膜中的应力可以克服通过引入机械沟槽隔离光子器件从传播裂纹。我们展示了一个Si 3 N4环形谐振器,其固有品质因数为700万,对应的传播损耗为4.2 dB/m。这是迄今为止报道的在1550 nm波长范围内的高限制Si 3 N4环形谐振器的最高品质因数。

英文摘要:

Silicon nitride (Si3N4) ring resonators are critical for a variety of photonic devices. However the intrinsically high film stress of silicon nitride has limited both the optical confinement and quality factor (Q) of ring resonators. We show that stress in Si3N4 films can be overcome by introducing mechanical trenches for isolating photonic devices from propagating cracks. We demonstrate a Si3N4 ring resonator with an intrinsic quality factor of 7 million, corresponding to a propagation loss of 4.2 dB/m. This is the highest quality factor reported to date for high confinement Si3N4 ring resonators in the 1550 nm wavelength range.

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