量子振荡法研究BiTeI自旋手征体费米面
Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations
摘要：
我们利用de Haas-van Alphen和Shubnikov-de Haas振荡给出了非中心对称半导体BiTeI自旋手征体态的费米面图。我们确定了两个不同的费米表面与一个独特的纺锤环面型拓扑结构和非平凡的Berry阶段，确认自旋手征相反循环自旋纹理。在高磁场的量子极限附近，我们发现了一个实质性的塞曼效应与有效的g因子为~ 60的Rashba分裂费米面。这些研究结果提供了明确的证据，强Rashba和塞曼耦合在体状态的BiTeI，这表明BiTeI是一个很好的平台托管的自旋极化手性状态。
英文摘要：
We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic fields, we find a substantial Zeeman effect with an effective g-factor of ~ 60 for the Rashba-split Fermi surfaces. These findings provide clear evidence of strong Rashba and Zeeman coupling in the bulk states of BiTeI, suggesting that BiTeI is a good platform hosting the spin-polarized chiral states.
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