SiC外延层掺杂分布和表面声子极化激元波导的ASNOM映射
ASNOM mapping of SiC epi-layer doping profile and of surface phonon polariton waveguiding
摘要：
对生长在重掺杂4 H-SiC衬底上的轻掺杂4 H-SiC外延层进行了无孔SNOM成像。在$C^{13}O_{2}^{16}$激光器的光频率下拍摄的ASNOM图像显示出衬底和外延层之间的清晰对比。对比度在$884cm^{-1}$的激光频率处消失，并且在更高的频率$(923cm^{-1})$处变得更清晰。这可以通过由载流子浓度引起的SiC的局部极化率的变化来解释，这在较高的频率下更加明显。由于光频率进一步调谐（$935cm^{-1}$），横模结构出现在ASNOM图中，表明外延层露头带内的表面声子极化激元波的波导状限制。
英文摘要：
The apertureless SNOM mapping of the slightly-doped 4H-SiC epitaxial layer grown on a heavily-doped 4H-SiC substrate was performed with a cleaved edge geometry. ASNOM images taken at the light frequencies of a $C^{13}O_{2}^{16}$ laser show a clear contrast between the substrate and the epitaxial layer. The contrast vanishes at the laser frequency of $884cm^{-1}$, and gets clearer at higher frequencies $(923cm^{-1})$. This can be explained by changes in the local polarizability of SiC caused by the carrier concentration, which are more pronounced at higher frequencies. Since the light frequency is tuned up further ($935cm^{-1}$), a transversal mode structure appears in the ASNOM map, indicating a waveguide-like confinement of a surface phonon polariton wave inside the strip of an epi-layer outcrop.
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