基于氧化还原的电阻开关中的纳米电池需要扩展忆阻器理论
Nanobatteries in redox-based resistive switches require extension of memristor theory
摘要：
基于氧化还原的纳米离子电阻存储单元（ReRAM）是未来信息技术中最有前途的新兴纳米器件之一，其应用于存储器、逻辑和神经形态计算。最近，ReRAM与忆阻器和忆阻器件之间联系的偶然发现进一步加强了该领域的研究。在这里，我们在理论和实验水平上表明，纳米离子型忆阻元件固有地由非平衡态控制，从而产生纳米电池。因此，忆阻器理论必须加以扩展，以适应所观察到的非过零的I-V特性。纳米电池的初始电动势取决于材料系统的化学和传输特性，但也可以在ReRAM电池操作期间引入。电动势对纳米级存储器的动态行为有很大的影响，因此，它的控制是未来器件开发和精确建模的关键因素之一。
英文摘要：
Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous discovery of the link between ReRAMs and memristors and memristive devices has further intensified the research in this field. Here we show on both a theoretical and an experimental level that nanoionic-type memristive elements are inherently controlled by non-equilibrium states resulting in a nanobattery. As a result the memristor theory must be extended to fit the observed non zerocrossing I-V characteristics. The initial electromotive force of the nanobattery depends on the chemistry and the transport properties of the materials system but can also be introduced during ReRAM cell operations. The emf has a strong impact on the dynamic behaviour of nanoscale memories, and thus, its control is one of the key factors for future device development and accurate modelling.
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