Stacked topological insulator built from bismuth-based graphene sheet analogues
Bertold Rasche, Anna Isaeva, Michael Ruck, Sergey Borisenko, Volodymyr Zabolotnyy, Bernd Buchner, Klaus Koepernik, Carmine Ortix, Manuel Richter, Jeroen van den Brink
Commonly materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators (TIs) in 2005 has fundamentally challenged this dichotomy. In a TI, spin-orbit interaction generates a non-trivial topology of the electronic band-structure dictating that its bulk is perfectly insulating, while its surface is fully conducting. The first TI candidate material put forward -graphene- is of limited practical use since its weak spin-orbit interactions produce a band-gap of ~0.01K. Recent reinvestigation of Bi2Se3 and Bi2Te3, however, have firmly categorized these materials as strong three-dimensional TI's. We have synthesized the first bulk material belonging to an entirely different, weak, topological class, built from stacks of two-dimensional TI's: Bi14Rh3I9. Its Bi-Rh sheets are graphene analogs, but with a honeycomb net composed of RhBi8-cubes rather than carbon atoms. The strong bismuth-related spin-orbit interaction renders each graphene-like layer a TI with a 2400K band-gap.
Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface
Chemnitz University of Technology（开姆尼茨工业大学）；Center for Materials, Architectures and Integration of Nanomembranes (MAIN)（纳米膜材料、架构与集成中心）；Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich（于利希研究中心彼得·格林贝格研究所）；Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology（于利希-亚琛研究联盟未来信息技术基础）；Diamond Light Source Ltd.（钻石光源有限公司）；RWTH Aachen University（亚琛工业大学）
Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
Self-Folding and Self-Scrolling Mechanisms of Edge-Deformed Graphene Sheets: A Molecular Dynamics Study
Institute of Physics, University of Bras\' i lia, 70.919-970, Bras\' i lia, Brazil.；Institute of Physics, University of Bras\'ilia, Bras\'ilia, 70910-900, Brazil.；Federal Institute of Education, Science；Department of Electrical Engineering, University of Bras\' i lia 70919-970, Brazil.
Tuning the Electronic Structure of Graphene by Controlling Spatial Confinement
Center for Advanced Systems Understanding (CASUS)（高级系统理解中心）；Helmholtz Zentrum Dresden-Rossendorf（德累斯顿-罗斯多夫亥姆霍兹中心）；Institute of Artificial Intelligence, Technische Universität Dresden（德累斯顿工业大学人工智能研究所）
