蚀刻MoS2的创新方法：表征和机理研究
An innovative way of etching MoS2: Characterization and mechanistic investigation
摘要：
我们报告了一个系统的研究，通过使用XeF2作为气体反应物的二硫化钼晶体的蚀刻。通过控制刻蚀工艺，可以得到形貌均匀的单层MoS2薄膜。所得材料的拉曼光谱和光致发光光谱与剥离的MoS2的拉曼光谱和光致发光光谱相似。利用这种策略，可以实现不同的图案，如霍尔条结构和六边形阵列。此外，通过引入石墨烯作为蚀刻掩模，研究了蚀刻机理。我们相信我们的技术开辟了一种简单可控的蚀刻MoS2的方法，可用于制造复杂的纳米结构，如纳米带，量子点和晶体管结构。这种使用XeF2的蚀刻工艺也可以扩展到其他感兴趣的二维晶体。
英文摘要：
We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.
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