硫系杂质引入微结构硅的费米能级及其对太阳电池效率影响的研究
Study on the Fermi level of microstructured Silicon with impurities introduced by chalcogenides and their affect on solar cell efficiency
摘要：
微结构硅是在一定条件下用飞秒激光脉冲辐照硅片表面而得到的，它具有特殊的光学特性，如对波长为0.25 ~ 17μm的光有强吸收。因此，它在中间带太阳能电池（IBSC）中具有很大的应用前景。一些文献讨论了硫族化合物引入硅中的简单替位杂质的电子结构。并在此基础上，通过高温退火处理，建立了硫和氧引入微结构硅的杂质能级模型。利用多能级广义统计方法，分析了各局域能级中电子的几率以及费米能级与温度和杂质密度的关系。然后利用细致平衡理论讨论了相应IBSC的理论转换效率。并详细讨论了利用飞秒激光微结构硅制作高效率太阳能电池的问题。
英文摘要：
Microstructured Silicon, which is obtained by irradiating the surface of a Silicon wafer with femtosecond laser pulses under certain circumstances, has unusual optical properties such as the strong absorption of light with wavelength from 0.25μm to 17μm. So it holds great promise in the intermediate band solar cell (IBSC). Some articles have discussed the electronic structure associating with simple substitutional impurities in Silicon introduced by chalcogenides. And on this basis, after high temperature annealing treatment, we establish the mode of impurity levels of microstructured Silicon introduced by sulfur and oxygen. Using generalized statistics of multi-level,we analyze the probability of electronic in all local energy levels and the relationship among Fermi level, temperature and the density of impurities. Then the theoretical conversion efficiency of the corresponding IBSC is discussed with the Detailed Balance Theory. And the issue of making high efficiency solar cells based on femtosecond laser microstructured Silicon is discussed in detail.
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