PVC纳米复合材料电导异常的特征
On the specifics of the electrical conductivity anomalies in PVC nanocomposites
摘要：
描述聚合物纳米复合材料的导电性的“异常”特征的定性模型，特别是，切换到相对厚（几十微米或更大）的柔性PVC膜的导电状态被认为是。在以前发表的实验结果中，电导率的变化由10个或更多的数量级发生在没有外部影响（自发），并施加电场的影响下，以及其他引发因素（如单轴压力）。在跳跃传导机制的模型中，它示出，在外部场的作用下的传导状态的切换显着（数量级）低于阈值可以与高电阻状态的不稳定性，从序列的结果“短路”（可逆软击穿）的区域之间的窄绝缘间隙具有相对较高的导电性。增加剩余绝缘间隙中的场强最终导致在外部电极之间形成导电通道，并将复合膜样品的电导率切换到高电导率状态。该级联模型基本上是基于从通常的描述的电荷隧穿通过单个独立的绝缘间隙，以考虑相邻间隙之间的相关性的过渡。在开发模型的框架内，其他的“异常”，如样品厚度，压力和其他影响的电阻的指数依赖性，可以定性地解释。雪崩晶体管的级联击穿模型的类比也被认为是。
英文摘要：
A qualitative model describing the "anomalous" features of the conductivity of polymer nanocomposites, in particular, switching to the conducting state in relatively thick (tens of microns or more) of flexible PVC films is considered. In previously published experimental results, change of conductivity by 10 or more orders of magnitude occurred both in the absence of external influences (spontaneously), and under the influence of an applied electric field, as well as other initiating factors (such as uniaxial pressure) . In a model of hopping conduction mechanism it is shown, that switching in the conduction states under the action of external field significantly (by orders of magnitude) below threshold can be associated with a high-resistance state instability that results from the sequence of "shorting" (reversible soft breakdown) of narrow insulating gaps between regions with relatively high conductivity. Increasing the field strength in the remaining insulating gaps ultimately leads to the formation of a conducting channel between the external electrodes and switching conductivity of the composite film sample in a state of high conductivity. This cascade model is essentially based on the transition from the usual description of the charge tunneling through single independent insulating gap to take into account correlations between adjacent gaps. In the frame of developed model other "anomalies" such as exponential dependence of the resistance on the sample thickness, pressure, and other influences can be qualitative explained. An analogy of the model with a cascading breakdown of avalanche transistors is also considered.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
