arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1302.4740cond-mat.mes-hallcond-mat.mtrl-sci
收藏

外延和多晶肖特基界面上铁磁Ni中热电子传输的比较

Comparison of hot-electron transmission in ferromagnetic Ni on epitaxial and polycrystalline Schottky interfaces

S. Parui, K. G. Rana, L. Bignardi, P. Rudolf, B. J. van Wees, T. Banerjee

摘要:

用弹道电子发射显微镜(BEEM)测量了Ni中热电子在多晶Si(111)/Au和外延Si(111)/NiSi_2两种肖特基界面上的衰减长度与能量的关系。对于同样制备的Si(111)衬底和相同的Ni厚度,发现多晶界面的BEEM透射率低于外延界面。然而,在这两种情况下,热电子衰减长度在镍被发现是相同的。这是阐明了温度无关的非弹性散射,传输概率跨越肖特基接口,并在不同的接口散射。

英文摘要:

The hot-electron attenuation length in Ni is measured as a function of energy across two different Schottky interfaces viz. a polycrystalline Si(111)/Au and an epitaxial Si(111)/NiSi_2 interface using ballistic electron emission microscopy (BEEM). For similarly prepared Si(111) substrates and identical Ni thickness, the BEEM transmission is found to be lower for the polycrystalline interface than for the epitaxial interface. However, in both cases, the hot-electron attenuation length in Ni is found to be the same. This is elucidated by the temperature-independent inelastic scattering, transmission probabilities across the Schottky interface, and scattering at dissimilar interfaces.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑