单分散碳纳米管薄膜晶体管的本征和外征光响应
Extrinsic and Intrinsic Photoresponse in Monodisperse Carbon Nanotube Thin Film Transistors
摘要：
光谱，时间分辨扫描光电流显微镜示出区分单分散半导体（99%）的单壁碳纳米管（SWCNTs）从衬底的外在的光响应的内在的光响应。近红外激发产生的持续正光电流是由于单壁碳纳米管中带间激发产生的自由载流子。对于较短的激发波长，由Si基板的吸收产生两种类型的光电流：瞬态正的光响应，确定为位移电流，和持久的负光电流，所产生的光电门的单壁碳纳米管薄膜。
英文摘要：
Spectroscopic, time-resolved scanning photocurrent microscopy is shown to distinguish the intrinsic photoresponse of monodisperse semiconducting (99%) single-walled carbon nanotubes (SWCNTs) from the extrinsic photoresponse of the substrate. A persistent positive photocurrent induced by near-IR excitation is attributed to the generation of free carriers by inter-band excitation in SWCNTs. For shorter excitation wavelengths, absorption by the Si substrate generates two types of photocurrent: a transient positive photoresponse, identified as a displacement current, and a persistent negative photocurrent that arises from photogating of the SWCNT thin film.
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