具有可控品质因数和光敏性的ZnO UV光电探测器
ZnO UV photodetector with controllable quality factor and photosensitivity
摘要：
ZnO纳米线作为紫外光探测器具有巨大的应用潜力。它们的光电流产生机制与表面状态的存在密切相关，其中已经进行了相当大的努力，例如表面化学改性，以提高它们的光电探测能力。在这项工作中，我们报告了一个步骤，在这个方向上证明了光检测器的光敏性和品质因数（Q因子）是完全可调的施加的栅极电压。这种机制使紫外光检测选择性范围从数十纳米（半高全宽- FWHM）到3纳米的窄检测。这种控制为新的应用铺平了道路，特别是与具有非常尖锐的发光的元素的检测有关。
英文摘要：
ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the photosensitivity and quality factor (Q factor) of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM) down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence.
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