用于非致冷微测辐射热计的金属硅化物/多晶硅肖特基二极管
Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
摘要：
提出了一种在多晶硅薄膜上形成的硅化镍肖特基二极管<P>作为单片非致冷微测辐射热计红外焦平面阵列的温度传感器。用透射电子显微镜研究了低温合成的硅化镍/多晶硅薄膜的结构和成分。Ni硅化物被识别为由20至40%的Ni 3Si、30至60%的Ni 2Si和10至30%的NiSi组成的多相化合物，在硅化物/多晶Si界面处具有可能少量的NiSi 2含量。肖特基二极管的整流比随温度从22 ℃升高到70 ℃而变化，在80 K时整流比超过1000。发现在室温下，~0.95 eV的势垒控制光电压谱。在80 K下的光电动势谱中观察到一组势垒，并归因于Ni-硅化物/多晶硅界面。电压和电流的温度系数的绝对值被发现从0.3到0.6%/K的二极管的正向偏置和2.5%/K左右的反向偏置。
英文摘要：
Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as multi-phase compound composed by 20 to 40% of Ni3Si, 30 to 60% of Ni2Si and 10 to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from ~100 to ~20 for the temperature increasing from 22 to 70C; they exceed 1000 at 80K. A barrier of ~0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-emf spectra at 80K and attributed to the Ni-silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3 to 0.6%/K for forward biasing and around 2.5%/K for reverse biasing of the diodes.
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