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arXiv 1301.3786quant-phphysics.atom-ph
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囚禁离子的缀饰态相位门的演示

Demonstration of a dressed-state phase gate for trapped ions

T. R. Tan, J. P Gaebler, R. Bowler, Y. Lin, J. D. Jost, D. Leibfried, D. J. Wineland

摘要:

我们演示了Bermudez等人提出的捕获离子纠缠门方案。[Phys. Rev. A 85,040302(2012)]。强载流子和单边带跃迁的同时激发使得能够确定性地产生纠缠态。该方法适用于磁场不敏感状态,对热激发是鲁棒的,包括从量子位退相误差的动态解耦,并且与具有捕获离子的一些其他纠缠门相比,在实验实现中提供了简化。我们实现了0.974(4)的贝尔态保真度,并确定了主要的误差来源。

英文摘要:

We demonstrate a trapped-ion entangling-gate scheme proposed by Bermudez et al. [Phys. Rev. A 85, 040302 (2012)]. Simultaneous excitation of a strong carrier and a single-sideband transition enables deterministic creation of entangled states. The method works for magnetic field-insensitive states, is robust against thermal excitations, includes dynamical decoupling from qubit dephasing errors, and provides simplifications in experimental implementation compared to some other entangling gates with trapped ions. We achieve a Bell state fidelity of 0.974(4) and identify the main sources of error.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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