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arXiv 1301.2142cond-mat.mtrl-sci
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Si-C键级屏蔽经验势

Screened empirical bond-order potentials for Si-C

Lars Pastewka, Andreas Klemenz, Peter Gumbsch, Michael Moseler

摘要:

典型的经验键序势是短程的,并且对于诸如晶体硅或金刚石的材料给出延性而不是脆性行为。筛选功能可用于增加这些潜力的范围。我们概述了一个一般的程序,结合屏蔽功能与键序潜力,不需要改装任何潜在的属性。我们使用这种方法来修改Tersoff的[Phys.Rev.B39,5566(1989)],Erhart & Albe的[Phys.Rev.B71,35211(2005)]和Kumagai et al.的[Comp. Mater. Sci. 39,457(2007)] Si、C和Si-C电势。由此产生的潜在配方正确地再现脆性材料的响应,并给出了改进的非晶相的描述。

英文摘要:

Typical empirical bond-order potentials are short ranged and give ductile instead of brittle behavior for materials such as crystalline silicon or diamond. Screening functions can be used to increase the range of these potentials. We outline a general procedure to combine screening functions with bond-order potentials that does not require to refit any of the potential's properties. We use this approach to modify Tersoff's [Phys. Rev. B 39, 5566 (1989)], Erhart & Albe's [Phys. Rev. B 71, 35211 (2005)] and Kumagai et al.'s [Comp. Mater. Sci. 39, 457 (2007)] Si, C and Si-C potentials. The resulting potential formulations correctly reproduce brittle materials response, and give an improved description of amorphous phases.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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