平面MOSFET中的电子-声子散射：NEGF和Monte Carlo方法
Electron-Phonon Scattering in Planar MOSFETs: NEGF and Monte Carlo Methods
摘要：
提出了一种将电子-声子散射纳入适用于平面MOSFET的非平衡格林函数（NEGF）框架的形式。重构的NEGF方程的横向动量模式的近似求和导致一个严格和有效的解决方案的方法。这有助于大大降低计算复杂性，允许治疗的量子力学和耗散的电子-声子散射过程的设备尺寸从纳米到微米。的形式主义是系统的基准对Monte Carlo解决方案的经典玻尔兹曼运输模型潜在的配置文件。结果表明，两种方法之间的各种通道长度和偏置条件下，弹性和非弹性散射过程的显着接近的协议。
英文摘要：
A formalism for incorporating electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is applicable to planar MOSFETs is presented. Restructuring the NEGF equations in terms of approximate summation of transverse momentum modes leads to a rigorous and efficient method of solution. This helps to drastically reduce the computational complexity, allowing treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is systematically benchmarked against Monte Carlo solutions of the classical Boltzmann transport for model potential profiles. Results show a remarkably close agreement between the two methods for variety of channel lengths and bias conditions, both for elastic and inelastic scattering processes.
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