磁性CP星中SiII和SiIII谱线的部分Paschen-Back分裂
Partial Paschen-Back splitting of SiII and SiIII lines in magnetic CP stars
摘要：
根据塞曼效应，对A型和B型主序星的光谱建模通常假设所有的谱线都被磁场分裂。然而，许多突出的谱线是由紧密间隔的双峰或三重峰产生的。这种谱线应该用部分帕邢-巴克（PPB）效应理论来处理。根据磁场的强度和方向，PPB效应可以导致谱线的Stokes IV轮廓与塞曼效应理论预测的那些显著不同。重要的是要了解的大小和类型的错误，引入到磁谱合成处理这些线与通常的塞曼分裂理论，而不是使用正确的理论处理线分裂。为了估计使用塞曼近似引入的误差，已经对元素硅的谱线进行了数值模拟，对于元素硅，假设倾斜旋转器模型，对于各种硅丰度和Vsini值，许多重要的谱线实际上处于PPB状态。假设PPB和塞曼分裂计算的斯托克斯IV配置文件的比较分析已经进行了一些强和弱的Si III和Si III线。分析表明，对于某些谱线的高精度研究，当磁极处的场强Bp> 10 kG时，应采用PPB方法。在SIII线5041 A的情况下，两个模拟轮廓之间的差异是由来自所谓的“重影”线的显著贡献引起的。
英文摘要：
Modelling of the spectra of magnetic A and B main sequence stars is generally done assuming that all the lines are split by the magnetic field according to the Zeeman effect. However, a number of prominent spectral lines are produced by closely spaced doublets or triplets. Such lines should be treated using the theory of the partial Paschen-Back (PPB) effect. Depending on the strength and orientation of magnetic field, the PPB effect can result in the Stokes IV profiles of a spectral line that differ significantly from those predicted by the Zeeman effect theory. It is important to understand the size and types of errors that are introduced into magnetic spectrum synthesis by treating such lines with the usual Zeeman splitting theory rather than using the correct theoretical treatment of line splitting. To estimate the error introduced by the use of the Zeeman approximation, numerical simulations have been performed for spectral lines of the element silicon, for which a number of important lines are actually in the PPB regime, assuming an oblique rotator model, for various silicon abundances and Vsini values. A comparative analysis of the Stokes IV profiles calculated assuming the PPB and Zeeman splitting has been carried out for a number of both strong and weak SiII and SiIII lines. The analysis indicates that for high precision studies of some spectral lines the PPB approach should be used if the field strength at the magnetic poles is Bp>10kG. In the case of the SiII line 5041A, the difference between the two simulated profiles is caused by a significant contribution from a so called "ghost" line.
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