CLARO-CMOS,一种用于像素化光电探测器快速光子计数的极低功率ASIC
CLARO-CMOS, a very low power ASIC for fast photon counting with pixellated photodetectors
摘要:
CMOS是一种专用集成电路(ASIC),设计用于使用像素化光电探测器(如多阳极光电倍增管(Ma-PMT)、微通道板(MCP)和硅光电倍增器(SiPM))进行快速光子计数。第一个原型有四个通道,每个通道都有一个可设置增益的电荷敏感放大器和一个可设置阈值的放大器,为每个通道独立提供快速命中信息。该设计采用成熟、稳定且廉价的0.35 um CMOS工艺实现,在速度和功耗方面具有出色的性能。该原型在低速率下每通道功耗小于1 mW,在事件速率为10 MHz时每通道功耗小于2 mW。对于阈值以上10倍以内的输入信号,每个脉冲后的恢复时间小于25 ns。输入参考RMS噪声约为7.7 ke^-(1.2 fC),输入电容为3.3 pF。由于低噪声和高速度,对于几百万电子的典型光电倍增管信号,测量的时序分辨率低至10 ps RMS,对应于这些探测器的单光子响应。
英文摘要:
The CLARO-CMOS is an application specific integrated circuit (ASIC) designed for fast photon counting with pixellated photodetectors such as multi-anode photomultiplier tubes (Ma-PMT), micro-channel plates (MCP), and silicon photomultipliers (SiPM). The first prototype has four channels, each with a charge sensitive amplifier with settable gain and a discriminator with settable threshold, providing fast hit information for each channel independently. The design was realized in a long-established, stable and inexpensive 0.35 um CMOS technology, and provides outstanding performance in terms of speed and power dissipation. The prototype consumes less than 1 mW per channel at low rate, and less than 2 mW at an event rate of 10 MHz per channel. The recovery time after each pulse is less than 25 ns for input signals within a factor of 10 above threshold. Input referred RMS noise is about 7.7 ke^- (1.2 fC) with an input capacitance of 3.3 pF. Thanks to the low noise and high speed, a timing resolution down to 10 ps RMS was measured for typical photomultiplier signals of a few million electrons, corresponding to the single photon response for these detectors.
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