沟槽栅功率MOSFET：最新进展和创新
Trench Gate Power MOSFET: Recent Advances and Innovations
摘要：
在所有MOS器件中，沟槽栅MOSFET的导通电阻最低，是最适合中低功率应用的功率器件。本章讨论了沟槽栅功率MOSFET的发展，从其开始到最近的趋势。重点介绍了为满足高效运行要求而进行的结构改进、制造技术的进步、表征方法和各种可靠性问题。
英文摘要：
The trench gate MOSFET has established itself as the most suitable power device for low to medium power applications by offering the lowest possible ON resistance among all MOS devices. The evolution of the trench gate power MOSFET has been discussed in this chapter, starting right from its beginnings to the recent trends. The innovations in the structural improvements to meet the requirements for an efficient operation, the progress in the fabrication technology, the characterization methods and various reliability issues have been emphasized.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
