Co/CoO/Co薄膜结构中界面感应垂直磁各向异性的原位MOKE研究
Interface induced perpendicular magnetic anisotropy in Co/CoO/Co thin film structure: An in-situ MOKE investigation
摘要：
在Si（001）衬底上生长了Co /CoO/Co多晶薄膜，利用原位磁光克尔效应研究了薄膜的磁特性。在顶部Co层中观察到易磁化轴垂直于膜表面的磁各向异性，而底层被发现是软的，具有面内磁化，而没有顶层的任何影响。非原位面内和面外衍射测量表明，Co在氧化界面上的生长是以c轴垂直于膜面的择优取向进行的，这导致了观察到的垂直磁各向异性。纹理的c轴预计是由于在界面处的Co和氧之间的杂交的界面能的最小化的结果。
英文摘要：
Co /CoO/Co polycrystalline film was grown on Si (001) substrate and magnetic properties have been investigated using in-situ magneto-optic Kerr effect during growth of the sample. Magnetic anisotropy with easy axis perpendicular to the film surface has been observed in top Co layer, whereas bottom layer was found to be soft with in-plane magnetization without any influence of top layer. Ex-situ in-plane and out-of-plane diffraction measurements revealed that the growth of Co on oxidized interface takes place with preferential orientation of c-axis perpendicular to the film plane, which results in the observed perpendicular magnetic anisotropy. Texturing of the c-axis is expected to be a result of minimization of the interface energy due to hybridization between Co and oxygen at the interface.
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