移动掺杂半导体中两条相反的磁滞曲线
Two opposite hysteresis curves in semiconductors with mobile dopants
摘要：
最近的实验研究表明，在含有可移动掺杂剂的半导体（SMD）中，出现了非常规的电流-电压（I-V）滞回曲线，这种滞回曲线的动态变化方向是反“8”形和“8”形。然而，这两个方向形成的基础理论仍然缺乏，这对面向应用的研究构成了主要障碍。在这里，我们引入了一个理论模型来解释这两个方向的起源，并发现这两种方式起源于SMD中掺杂剂分布的空间不均匀性。当掺杂剂从远离（接近）肖特基界面驱动到SMD中的相对侧时，获得滞后曲线的反数字八（数字八）方式。这一发现表明，在SMD滞回曲线的方向可以控制。
英文摘要：
Recent experimental researches on semiconductors with mobile dopants (SMD) have reported unconventional hysteretic current-voltage (I-V) curves, which form dynamically in either one of the two opposite directions, the counter-figure-eight and figure-eight ways. However the fundamental theory for the formation of the two directions is still absent, and this poses a major barrier for researches oriented to applications. Here, we introduce a theoretical model to explain the origin of the two directions, and find that the two ways originate from the spatial inhomogeneity of the dopant distribution in SMD. The counter-figure-eight (figure-eight) way of the hysteretic curve is obtained when dopants are driven from far from (near) the Schottky interface to the opposite side in the SMD. This finding indicates that the directions of hysteretic curve in SMD can be controlled.
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