光剥离截面中的量子过势垒反射效应
Quantum over-barrier reflection effects manifested in the photodetachment cross sections
摘要：
研究了H $^-$在势垒附近的光剥离。提出了一个新的计算势垒诱导的截面的公式。新公式描述了势垒顶部附近的两个量子效应。对于势垒顶部附近和上方的能量，考虑了量子过势垒反射效应，截面中的诱导振荡仍然很突出;对于势垒顶部附近和下方的能量，考虑了量子隧穿效应，从而减弱了振荡。对于远离势垒顶的能量，新公式与标准闭合轨道理论一致。我们证明了通过在金属表面附近放置负离子并施加指向表面的电场，可以实现不同宽度和位置的势垒。通过改变电场强度和负离子与表面之间的距离，可以系统地改变势垒的宽度和位置。计算结果还估计了上述量子效应在截面中的大小和位置。
英文摘要：
Photodetachment of H$^-$ near a potential barrier is studied. A new formula is presented for the cross sections induced by a barrier. The new formula describes two quantum effects near barrier tops. For energies near and above barrier tops, the quantum over-barrier reflection effects are included and the induced oscillations in the cross sections are still prominent; for energies near and below barrier tops, the quantum tunneling across barriers is taken into account and consequently the oscillations are weakened. For energies far away from the barrier tops, the new formula agrees with the standard closed-orbit theory. We demonstrate that a potential barrier of various width and location can be realized by placing a negative ion near a metal surface and applying an electric field pointing to the surface. The width and location of the barrier can be systematically changed by varying the electric field strength and the distance between the negative ion and the surface. Results are also presented for estimating the sizes and locations of aforementioned quantum effects in the cross sections.
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