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arXiv 1207.4548cond-mat.mes-hall
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载流子密度控制的二维空穴系统的各向异性自旋极化率

Carrier-density-controlled anisotropic spin susceptibility of two-dimensional hole systems

T. Kernreiter, M. Governale, U. Zuelicke

摘要:

我们在Luttinger模型的基础上,对典型半导体材料的价带进行了量子阱限制空穴的研究。即使当只有最低的准二维(准2D)子带填充,静态自旋磁化率原来是非常不同的普遍各向同性Lindhard函数的线形获得的2D导电电子系统。强各向异性和特殊的密度依赖于自旋相关的响应在长波长的二维孔应该有可能在稀磁量子阱的易轴和易平面磁化之间切换。提出了一种二维孔系的有效g因子。

英文摘要:

We have studied quantum-well-confined holes based on the Luttinger-model description for the valence band of typical semiconductor materials. Even when only the lowest quasi-two-dimensional (quasi-2D) subband is populated, the static spin susceptibility turns out to be very different from the universal isotropic Lindhard-function lineshape obtained for 2D conduction-electron systems. The strongly anisotropic and peculiarly density-dependent spin-related response of 2D holes at long wavelengths should make it possible to switch between easy-axis and easy-plane magnetization in dilute magnetic quantum wells. An effective g factor for 2D hole systems is proposed.

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