NdGaO3/SrTiO3导电界面的可逆和持久光电导
Reversible and Persistent Photoconductivity at the NdGaO3/SrTiO3 Conducting Interface
摘要：
已知带隙绝缘体LaAlO 3和SrTiO 3之间的界面具有高度移动的二维电子气。在这里，我们报告的NdGaO 3/SrTiO 3接口的制造和表征，共享与LaAlO 3/SrTiO 3的全钙钛矿结构，绝缘性的单一建筑块和极性-非极性字符。我们的工作表明，在NdGaO 3/SrTiO 3的移动电子的金属层形成，与性能相媲美的LaAlO 3/SrTiO 3。原子尺度分辨的EELS分析证明了注入电子在Ti位点的局部化，在界面的几个晶胞内。研究了样品的电输运和光电导特性。我们发现，低于SrTiO 3间隙的光子照射不会增加载流子密度，但略有提高低温迁移率。一个巨大的持续光电导效应，而不是观察，即使在低能量光子的照射下，在非最佳条件下制造的高电阻样品。我们讨论的结果中提出的二维电子气形成的不同机制的光。讨论和分析了这些系统中的普通光电导和持续光电导。
英文摘要：
The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrTiO3 a metallic layer of mobile electrons is formed, with properties comparable to LaAlO3/SrTiO3. The localization of the injected electrons at the Ti sites, within a few unit cells from the interface, was proved by Atomic-scale-resolved EELS analyses. The electric transport and photoconduction of samples were also investigated. We found that irradiation by photons below the SrTiO3 gap does not increase the carrier density, but slightly enhances low temperature mobility. A giant persistent photoconductivity effect was instead observed, even under irradiation by low energy photons, in highly resistive samples fabricated at non-optimal conditions. We discuss the results in the light of different mechanisms proposed for the two-dimensional electron gas formation. Both the ordinary and the persistent photoconductivity in these systems are addressed and analyzed.
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