ESR揭示的完全金属-半导体分离的单壁碳纳米管中的间接交换作用
Indirect Exchange Interaction in Fully Metal-Semiconductor Separated SWCNTs Revealed by ESR
摘要：
从高度金属-半导体（M-SC）分离的单壁碳纳米管的ESR响应温度T在0.39和200 K之间的两个系统的特征不同。信号来源于缺陷自旋，但与自由电子的相互作用导致M管的更大线宽。后者随着T的增加而减小，而对于SC管，它随着T的增加而增加。自旋在低于10 K时发生铁磁相变。间接交换被认为是负责自旋-自旋相互作用，在M管的情况下由RKKY相互作用支持。对于SC管，建议通过Orbach过程的自旋-晶格弛豫来确定线宽。
英文摘要：
The ESR response from highly metal-semiconductor(M-SC) separated SWCNTs for temperatures T between 0.39 and 200 K is characteristically different for the two systems. The signal originates from defect spins but interaction with free electrons leads to a larger line width for M tubes. The latter decreases with increasing T whereas it increases with T for SC tubes. The spins undergo a ferromagnetic phase transition below around 10 K. Indirect exchange is suggested to be responsible for the spin-spin interaction, supported by RKKY interaction in the case of M tubes. For SC tubes spin-lattice relaxation via an Orbach process is suggested to determine the line width.
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