Si（100）上自组织内轴CoSi2的纳米点到纳米线的应变驱动形状转变
Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)
摘要：
我们报道了在Si（100）衬底上生长纳米尺度自组织内轴CoSi 2岛的应变驱动形状转变现象。已经观察到小至15 \times 15 nm 2的正方形小岛。岛生长在正方形形状以下的Si（100）衬底的四重对称，达到67 \times 67 nm 2的临界尺寸。在此临界尺寸下发生形状转变。较大的岛采用矩形形状，长度不断增加，宽度逐渐减小到约25 nm的渐近值。我们已经观察到纵横比高达~ 20：1的纳米线岛。长纳米线异质结构部分生长在表面以上（~ 3 nm），但大部分生长到Si衬底中（~17 nm）。这些自组织纳米结构表现为纳米级肖特基二极管。它们可能在硅纳米纤维中有用，并在构建纳米器件中找到潜在的应用。
英文摘要：
We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.
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