在乙硅烷和氖环境中在SiC（000-1）表面上形成石墨烯
Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
摘要：
利用乙硅烷和氖环境，研究了SiC（000-1）表面（{0001}表面的C面）上石墨烯的形成。在这两种情况下，石墨烯和SiC之间的界面被发现是不同于在真空中形成石墨烯。在界面处形成了复杂的低能电子衍射花样，其rt（43）× rt（43）-R \pm 7.6°对称性。观察到基本上由石墨烯组成的界面层，并且认为该层与下面的SiC共价键合的方式产生rt（43）x rt（43）-R \pm 7.6°结构[即类似于在SiC（0001）表面（Si面）上形成的6 rt（3）x 6 rt（3）-R30°“缓冲层”]。发现表面的氧化改性（消除）rt（43）x rt（43）-R \pm 7.6°结构，其以与Si面缓冲层发生的已知“去耦”相同的方式解释。
英文摘要：
The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with rt(43) x rt(43)-R\pm7.6° symmetry is found to form at the interface. An interface layer consisting essentially of graphene is observed, and it is argued that the manner in which this layer covalently bonds to the underlying SiC produces the rt(43) x rt(43)-R\pm7.6° structure [i.e. analogous to the 6rt(3) x 6rt(3)-R30° "buffer layer" that forms on the SiC(0001) surface (the Si-face)]. Oxidation of the surface is found to modify (eliminate) the rt(43) x rt(43)-R\pm7.6° structure, which is interpreted in the same manner as the known "decoupling" that occurs for the Si-face buffer layer.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
