AgGaTe $_2$及相关黄铜矿结构材料的热电性能
Thermoelectric properties of AgGaTe$_2$ and related chalcopyrite structure materials
摘要：
我们提出了一个分析的p型AgGaTe $_{2}$，它已经显示了一个$ZT$的0.8与部分优化的潜在热电性能，并观察到，相同的能带结构的功能，如轻，重带和各向同性传输的混合物，导致这种良好的性能存在于某些其他三元黄铜矿结构的半导体。我们发现，AgGaTe $_2$的最佳性能将被发现之间的4 $\times 10^{19}$和2 $\times 10^{20}$ cm $^{-3}$在900 K，和2 $\times 10^{19}$和10 $^{20}$ cm $^{-3}$在700 K的空穴浓度，和某些其他黄铜矿半导体可能会显示出良好的热电性能，在类似的掺杂范围和温度，如果不是更高的晶格热导率。
英文摘要：
We present an analysis of the potential thermoelectric performance of p-type AgGaTe$_{2}$, which has already shown a $ZT$ of 0.8 with partial optimization, and observe that the same band structure features, such as a mixture of light and heavy bands and isotropic transport, that lead to this good performance are present in certain other ternary chalcopyrite structure semiconductors. We find that optimal performance of AgGaTe$_2$ will be found for hole concentrations between 4 $\times 10^{19}$ and 2 $\times 10^{20}$cm$^{-3}$ at 900 K, and 2 $\times 10^{19}$ and 10$^{20}$ cm$^{-3}$ at 700 K, and that certain other chalcopyrite semiconductors might show good thermoelectric performance at similar doping ranges and temperatures if not for higher lattice thermal conductivity.
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