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arXiv 1203.0636cond-mat.mes-hall
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Ni(111)表面石墨烯生长机理的紧束缚计算

Tight-binding calculation of growth mechanism of graphene on Ni(111) surface

Zhou Chen, Hu Jing, Tian Yuan, Zhao Qianying, Miao Ling, Jiang Jianjun

摘要:

采用紧束缚SCC-DFTB方法研究了石墨烯在Ni表面以及台阶上的成核过程。结果表明,当苯环吸附在Ni(111)表面时,fcc构型的总能量最低,是最稳定的构型.边缘生长石墨烯的碳原子的活性从边界到中心逐渐降低,当它们被吸附在基底上时。石墨烯层可以在Ni(1 - 11)面和Ni(1-11)面相交形成的台阶面上连续生长。同时,当层生长较大时,层与Ni表面之间将发生失配,从而导致缺陷。减小石墨烯与台阶表面的失配将有利于大面积、高质量石墨烯的生长。

英文摘要:

The nucleation of graphene on Ni surface, as well as on the step, is studied using a tight binding method of SCC-DFTB. The result demonstrates that the fcc configuration has the lowest total energy and thus is the most stable one compared to the other two structures when benzene ring is absorbed on the Ni(111) surface. The activity of marginal growth graphene's carbon atoms decreases from the boundary to the center, when they are absorbed on the substrate. Graphene layer can grow continuously on step surface formed by intersection of Ni(111) and Ni(1-11) surface. Meanwhile, a mismatch will occur between the layer and Ni surface and thus leads to flaws when the layer grows larger. Reducing the mismatch between the graphene and the step surface will benefit the growth of graphene of large area and high quality.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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