紧凑型固态III-V单等离子体激元源的建议
Proposal for compact solid-state III-V single-plasmon sources
摘要：
我们提出了一个紧凑的单等离子体激元源工作在近红外波长的集成III-V族半导体平台上，薄脊波导作为等离子体激元通道。通过在沟道上附加一个超小腔，可以显著提高等离子体激元产生效率（β）和自发衰减到沟道中的速率。与洛伦兹互易定理得出的分析模型捕获的主要物理参与的源的设计，并产生良好的协议与设备的全矢量模拟的结果。在共振时，预测超小腔将β因子增加70%，并将自发衰变率提高20倍。所提出的设计可以为集成和可扩展的等离子体量子网络铺平道路。本设计与其他全介电竞争的方法进行了比较。
英文摘要：
We propose a compact single-plasmon source operating at near-infrared wavelengths on an integrated III-V semiconductor platform, with a thin ridge waveguide serving as the plasmon channel. By attaching an ultra-small cavity to the channel, it is shown that both the plasmon generation efficiency (β) and the spontaneous-decay rate into the channel can be significantly enhanced. An analytical model derived with the Lorentz reciprocity theorem captures the main physics involved in the design of the source and yields results in good agreement with fully-vectorial simulations of the device. At resonance, it is predicted that the ultra-small cavity increases the β-factor by 70% and boosts the spontaneous decay rate by a factor 20. The proposed design could pave the way towards integrated and scalable plasmonic quantum networks. Comparison of the present design with other fully-dielectric competing approaches is addressed.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
