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arXiv 1202.4430cond-mat.supr-con
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空穴掺杂铁磷族化合物面内电阻率各向异性的符号反转

Sign-reversal of the in-plane resistivity anisotropy in hole-doped iron pnictides

E. C. Blomberg, M. A. Tanatar, R. M. Fernandes, Bing Shen, Hai-Hu Wen, J. Schmalian, R. Prozorov

摘要:

在母体和电子掺杂的化合物中,已经广泛地研究了铁磷属元素化物的耦合正交和磁性转变的电阻率的面内各向异性。所有这些研究普遍表明,在低于磁转变温度时自旋沿其反铁磁耦合的长斜方轴$a_{O}$上的电阻率$ρ_{a}$小于短斜方轴$b_{O}$的电阻率$ρ_{b}$,即。e. $ρ_{a}<ρ_{b}$。本文报道了在空穴掺杂化合物Ba $_{1-x}$ K $_{x}$ Fe $_{2}$ As $_{2}$中,随着掺杂量的增加,电阻率各向异性开始变得非常小,当掺杂量足够大时,电阻率各向异性最终改变符号,即:e. $ρ_{b}<ρ_{a}$。这一观察结果与最近的理论预测一致,该理论预测考虑了正交/斜方晶态中自旋波动对电子的各向异性散射。

英文摘要:

The in-plane anisotropy of the electrical resistivity across the coupled orthorhombic and magnetic transitions of the iron pnictides has been extensively studied in the parent and electron-doped compounds. All these studies universally show that the resistivity $ρ_{a}$ across the long orthorhombic axis $a_{O}$ - along which the spins couple antiferromagnetically below the magnetic transition temperature - is smaller than the resistivity $ρ_{b}$ of the short orthorhombic axis $b_{O}$, i. e. $ρ_{a}<ρ_{b}$. Here we report that in the hole-doped compounds Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$, as the doping level increases, the resistivity anisotropy initially becomes vanishingly small, and eventually changes sign for sufficiently large doping, i. e. $ρ_{b}<ρ_{a}$. This observation is in agreement with a recent theoretical prediction that considers the anisotropic scattering of electrons by spin-fluctuations in the orthorhombic/nematic state.

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