基于群论和k $\cdot$ p方法的多型纳米晶须能带结构研究
Electronic band structure of polytypical nanowhiskers: a theoretical approach based on group theory and k$\cdot$p method
摘要：
由III-V族化合物制成的半导体纳米晶须具有巨大的技术应用潜力。控制生长条件，如温度和直径，有可能在锌混合物和纤锌矿结晶相之间交替，从而产生所谓的多型性。这种效应对系统的电子和光学性质有很大的影响，对载流子产生新的限制形式。一个能够准确描述这些多型纳米结构中电子和光学性质的理论模型可以用于研究和开发新型纳米器件。在这项研究中，我们提出了一个纤锌矿/zincblend多典型模型的发展来计算电子能带结构的纳米晶须的基础上群论的概念和k $\cdot$ p方法。虽然兴趣是在多型超晶格，提出的模型被施加到一个单一的量子阱的InP提取物理的纤锌矿/zincblend多型。通过对实验结果的分析，可以预测出一些趋势：载流子的空间分离、垂直偏振（xy平面）在发光光谱中的优势以及带间跃迁的蓝移随应变的变化。提出了WZ InP自发极化的可能取值范围。
英文摘要：
Semiconductor nanowhiskers made of III-V compounds exhibit great potential for technological applications. Controlling the growth conditions, such as temperature and diameter, it is possible to alternate between zinc blend and wurtzite crystalline phases, giving origin to the so called polytypism. This effect has great influence in the electronic and optical properties of the system, generating new forms of confinement to the carriers. A theoretical model capable to accurately describe electronic and optical properties in these polytypical nanostructures can be used to study and develop new kinds of nanodevices. In this study, we present the development of a wurtzite/zincblend polytypical model to calculate the electronic band structure of nanowhiskers based on group theory concepts and the k$\cdot$p method. Although the interest is in polytypical superlattices, the proposed model was applied to a single quantum well of InP to extract the physics of the wurtzite/zincblend polytypism. By the analysis of our results, some trends can be predicted: spatial carriers' separation, predominance of perpendicular polarization (xy plane) in the luminescence spectra and interband transition blueshifts with strain. A possible range of values for the WZ InP spontaneous polarization was suggested.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
