Bi2Sr2CaCu2O8 +x台面结构的持久电掺杂
Persistent electrical doping of Bi2Sr2CaCu2O8+x mesa structures
摘要：
应用一个显着大的偏置电压小Bi 2Sr 2CaCu 2 O 8 +x台面结构导致持久掺杂的台面。在这里，我们采用这种效应的掺杂依赖性的Bi-2212单晶的电子光谱的分析，通过本征隧道光谱。我们能够可控地和可逆地将同一单晶的掺杂状态从欠掺杂状态改变为过掺杂状态，而不改变其化学组成。观察到，这种物理掺杂影响Bi-2212中的超导电性，类似于通过氧杂质的化学掺杂：在过掺杂的情况下，临界温度和超导能隙减小，在欠掺杂的情况下，c轴临界电流由于逐渐更不相干的层间隧穿而迅速减小，并且赝能隙迅速增加，指示临界掺杂点的存在。我们区分两种主要机制的持久性电掺杂：（i）即使在电压的贡献，归因于电荷转移效应，和（ii）奇数的电压贡献，归因于重新排序的氧杂质。
英文摘要：
Application of a significantly large bias voltage to small Bi2Sr2CaCu2O8+x mesa structures leads to persistent doping of the mesas. Here we employ this effect for analysis of the doping dependence of the electronic spectra of Bi-2212 single crystals by means of intrinsic tunneling spectroscopy. We are able to controllably and reversibly change the doping state of the same single crystal from underdoped to overdoped state, without changing its chemical composition. It is observed that such physical doping is affecting superconductivity in Bi-2212 similar to chemical doping by oxygen impurities: with overdoping the critical temperature and the superconducting gap decrease, with underdoping the c-axis critical current rapidly decreases due to progressively more incoherent interlayer tunneling and the pseudogap rapidly increases, indicative for the presence of the critical doping point. We distinguish two main mechanisms of persistent electric doping: (i) even in voltage contribution, attributed to a charge transfer effect, and (ii) odd in voltage contribution, attributed to reordering of oxygen impurities.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
