蓝紫InGaN半导体激光器中纵模间距的增强
Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor laser
摘要：
对InGaN半导体激光器中观察到的纵模间距增大现象提出了一种新的解释。研究表明，在一定的驱动条件下，激光活性层中存在的电子-氢等离子体振荡是产生模式聚集效应的原因。等离子体振荡的共振激发由于纵模拍频而发生。模式群的分离通常比单独的模式间隔大一个数量级。
英文摘要：
A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving conditions, are responsible for mode clustering effect. The resonant excitation of the plasma oscillations occurs due to longitudinal mode beating. The separation of mode clusters is typically by an order of magnitude larger that the individual mode spacing.
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