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arXiv 1112.2256cond-mat.supr-con
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Nb薄膜微桥边缘超导电性的积分和空间分辨电输运研究

Edge superconductivity in Nb thin film microbridges revealed by integral and spatially resolved electric transport

R. Werner, A. Yu. Aladyshkin, I. M. Nefedov, A. V. Putilov, M. Kemmler, D. Bothner, A. Loerincz, K. Ilin, M. Siegel, R. Kleiner, D. Koelle

摘要:

测量了有和无微孔的超导Nb薄膜微桥的电阻$R$与垂直外磁场$H$的关系。远低于转变温度,积分$R(H)$测量的电阻过渡到正常状态的平原桥显示两个不同的区域,这可以被确定为体和边缘超导,分别。后一种情况出现时,体超导性成为抑制在上临界场$H_{c2}$和低于临界场的边缘超导性$H_{c3}\approx 1.7\, H_{c2}$。AD桥中附加边的存在导致$R(H)$曲线的不同形状。我们使用低温扫描激光显微镜(LTSLM)来可视化扫描$H$后平面和AD桥中的电流分布。虽然普通电桥在其边缘处显示出$H > H_{c2}$的主导LTSLM信号,但AD电桥也由于AD周围的附加边缘状态而从电桥的内部部分给出信号。LTSLM揭示了左边缘和右边缘之间的电流分布的不对称性,这证实了理论预测。此外,实验结果与我们的数值模拟(基于时间相关的Ginzburg-Landau模型)产生的空间分布的序参量和电流密度为不同的偏置电流和$H$值的良好协议。

英文摘要:

The resistance $R$ vs perpendicular external magnetic field $H$ was measured for superconducting Nb thin--film microbridges with and without microholes [antidots (ADs)]. Well below the transition temperature, integral $R(H)$ measurements of the resistive transition to the normal state on the plain bridge show two distinct regions, which can be identified as bulk and edge superconductivity, respectively. The latter case appears when bulk superconductivity becomes suppressed at the upper critical field $H_{c2}$ and below the critical field of edge superconductivity $H_{c3}\approx 1.7\, H_{c2}$. The presence of additional edges in the AD bridge leads to a different shape of the $R(H)$ curves. We used low-temperature scanning laser microscopy (LTSLM) to visualize the current distribution in the plain and AD bridge upon sweeping $H$. While the plain bridge shows a dominant LTSLM signal at its edges for $H > H_{c2}$ the AD bridge also gives a signal from the inner parts of the bridge due to the additional edge states around the ADs. LTSLM reveals an asymmetry in the current distribution between left and right edges, which confirms theoretical predictions. Furthermore, the experimental results are in good agreement with our numerical simulations (based on the time-dependent Ginzburg--Landau model) yielding the spatial distribution of the order parameter and current density for different bias currents and $H$ values.

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