压缩应变对BaCe0.8Y 0.2O3质子导体拉曼模式的影响
The effect of compressive strain on the Raman modes of the dry and hydrated BaCe0.8Y0.2O3 proton conductor
摘要：
用高压Raman光谱和高压X射线衍射分析了BaCe_（0.8）Y_（0.2）O_（3-δ）质子导体在水化和压应变下的结构。当质子导体水合时，来自O-Ce-O单元的Ag和B2 g弯曲模式的压力依赖性变化被抑制，通过局部改变氧离子的电子密度直接影响质子转移。压缩应变导致Ce-O拉伸键硬化。质子导电性的活化势垒的提高，在最近的研究结果使用高压和高温阻抗谱线。因此，B1 g和B3 g模式的拉曼频率的增加意味着声子变得硬化并且在压缩应变时增加a-c晶面中的振动能量，而声子在b轴上弛豫，并且因此揭示Ag和B2 g模式的软化。因此，a-c晶面中的晶格增韧提高了质子转移的更高活化势垒，从而提高了各向异性电导率。质子与陶瓷基质晶格相互作用的实验研究结果为开发具有高质子迁移率和低激活能的外延应变质子导电薄膜系统提供了一般性的指导。
英文摘要：
The BaCe0.8Y0.2O3-δ proton conductor under hydration and under compressive strain has been analyzed with high pressure Raman spectroscopy and high pressure x-ray diffraction. The pressure dependent variation of the Ag and B2g bending modes from the O-Ce-O unit is suppressed when the proton conductor is hydrated, affecting directly the proton transfer by locally changing the electron density of the oxygen ions. Compressive strain causes a hardening of the Ce-O stretching bond. The activation barrier for proton conductivity is raised, in line with recent findings using high pressure and high temperature impedance spectroscopy. The increasing Raman frequency of the B1g and B3g modes thus implies that the phonons become hardened and increase the vibration energy in the a-c crystal plane upon compressive strain, whereas phonons are relaxed in the b-axis, and thus reveal softening of the Ag and B2g modes. Lattice toughening in the a-c crystal plane raises therefore a higher activation barrier for proton transfer and thus anisotropic conductivity. The experimental findings of the interaction of protons with the ceramic host lattice under external strain may provide a general guideline for yet to develop epitaxial strained proton conducting thin film systems with high proton mobility and low activation energy.
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