直接表征FinFETs的新工具
New tools for the direct characterisation of FinFETs
摘要：
本文讨论了经典的输运理论，如电子发射，可以作为一个强大的工具，用于研究和理解的最复杂的机制，在鳍式场效应晶体管（FinFET）的运输。通过简单的电流和微分电导测量，采取在不同的温度和不同的栅极电压（$V_G$的），它是可能的外推的重要参数，如运输的空间区域和沟道中心的电子势垒的高度的演变。此外，如果测量与模拟数据结合使用，则还可以提取这些物体的界面陷阱密度。这些都是重要的结果，也因为这些参数是直接在最先进的设备上提取的，而不是在专门设计的测试结构中。还讨论了在这些具有掺杂或未掺杂沟道的超尺度器件中可能出现的不同运输制度的可能表征。这些制度的例子是，全身反演和弱体反演。在\ref{sec:II}、\ref{sec:III}和\ref{sec:IV}章节中讨论了证明电子工具强度的具体案例。本文是对4个相关出版物的综合概述（见参考文献[2-5]），并已作为参考文献[6]中的一个章节提交。
英文摘要：
This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs). By means of simple current and differential conductance measurements, taken at different temperatures and different gate voltages ($V_G$'s), it is possible to extrapolate the evolution of important parameters such as the spatial region of transport and the height of thermionic barrier at the centre of the channel. Furthermore, if the measurements are used in conjunction with simulated data, it becomes possible to also extract the interface trap density of these objects. These are important results, also because these parameters are extracted directly on state-of-the-art devices and not in specially-designed test structures. The possible characterisation of the different regimes of transport that can arise in these ultra-scaled devices having a doped or an undoped channel are also discussed. Examples of these regimes are, full body inversion and weak body inversion. Specific cases demonstrating the strength of the thermionic tool are discussed in sections \ref{sec:II}, \ref{sec:III} and \ref{sec:IV}. This text has been designed as a comprehensive overview of 4 related publications (see Ref. [2-5]) and has been submitted as a book chapter in Ref. [6]).
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
