基于光刻限定底部金属电极的等离子体氧化的多层边缘分子器件
Multilayer Edge Molecular Devices Based on Plasma Oxidation of Photolithographically Defined Bottom Metal Electrode
摘要：
利用金属-绝缘体-金属隧道结的两个金属电极作为分子通道的两个电引线的多层边缘分子电子器件（MEMED）可以克服开发未来分子器件的长期存在的制造挑战。然而，制造MEMS绝缘体是MEMED制造中最具挑战性的步骤。提出了一种简化的分子器件方法，避免了在底部电极上沉积新材料以生长绝缘层。本文讨论了在光刻限定的区域内，通过一步氧化钽（Ta）底电极来生长MEMED绝缘体的方法，即通过氧化底金属电极本身来生长钽氧化物（TaOx）绝缘体。将有机分子团簇（OMCs）沿隧道结的周边跨接在1-3 nm的TaOx上，建立了高效的分子导电通道。OMC将TaOx基隧道结的非对称输运分布转化为对称输运分布。具有顶部铁磁（NiFe）电极的TaOx基隧道结表现出几个数量级的瞬态电流抑制。需要进一步的研究来加强电流抑制现象，并实现TaOx基多层边缘分子自旋电子学器件的全部潜力。
英文摘要：
A multilayer edge molecular electronics device (MEMED), which utilize the two metal electrodes of a metal-insulator-metal tunnel junction as the two electrical leads to molecular channels, can overcome the long standing fabrication challenges for developing futuristic molecular devices. However, producing ultrathin insulator is the most challenging step in MEMED fabrication. A simplified molecular device approach was developed by avoiding the need of depositing a new materiel on the bottom electrode for growing ultrathin insulator. This paper discuss the approach for MEMED's insulator growth by one-step oxidation of a tantalum (Ta) bottom electrode, in the pholithographically defined region; i.e. ultrathin tantalum oxide (TaOx) insulator was grown by oxidizing bottom metal electrode itself. Organometallic molecular clusters (OMCs) were bridged across 1-3 nm TaOx along the perimeter of a tunnel junction to establish the highly efficient molecular conduction channels. OMC transformed the asymmetric transport profile of TaOx based tunnel junction into symmetric one. A TaOx based tunnel junction with top ferromagnetic (NiFe) electrode exhibited the transient current suppression by several orders. Further studies will be needed to strengthen the current suppression phenomenon, and to realize the full potential of TaOx based multilayer edge molecular spintronics devices.
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