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arXiv 1111.5083cond-mat.supr-con
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具有外延隧道结的transmon量子比特的相干性

Coherence in a transmon qubit with epitaxial tunnel junctions

Martin P. Weides, Jeffrey S. Kline, Michael R. Vissers, Martin O. Sandberg, David S. Wisbey, Blake R. Johnson, Thomas A. Ohki, David P. Pappas

摘要:

我们开发了基于外延隧道结和叉指电容器的transmon量子比特。这种通过使用全光学光刻来图案化的多级量子位是朝着具有高集成密度的可扩展量子位迈出的一步。弛豫时间T1为0.72 - 0.86 μ sec,系综退相时间T2略大于T1。失相时间T2(1.36 μ sec)几乎是能量弛豫限制的。量子位光谱产生较弱的水平分裂比观察到的量子位与非晶势垒在同等大小的结。量子比特的推断微波损耗与独立谐振器测量确定的单个元件(结、布线电介质和叉指电容器)的加权损耗密切匹配。

英文摘要:

We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is .72-.86mu sec and the ensemble dephasing time T2 is slightly larger than T1. The dephasing time T2 (1.36mu sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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