掺杂剂的有序化和Tc提高到室温附近的可能性
Ordering of dopants and potential increase in Tc to near room temperature
摘要：
本文介绍了一种新的方法，以增加铜氧化物超导体的电阻Tc的值，可能接近室温，如果该方法被施加到所谓的欠掺杂制度。这涉及对提供空穴以及提供对断裂的掺杂剂进行排序。该策略是将具有较低Tc的掺杂区域与具有较高Tc的金属但未掺杂的区域分开。
英文摘要：
This paper describes a novel method to increase the resistive Tc of cuprate superconductors to values that might approach room temperature if the method is applied to the so-called underdoped regime. This involves ordering the dopants that provide the holes as well as provide pair breaking. The strategy is to separate the doped regions with lower Tc from metallic but undoped regions with the higher Tc.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
