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arXiv 1111.1485cond-mat.mtrl-sci
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Sb2Te3拓扑绝缘体薄膜的Landau量子化和厚度极限

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

Yeping Jiang, Yilin Wang, Mu Chen, Zhi Li, Canli Song, Ke He, Lili Wang, Xi Chen, Xucun Ma, Qi-Kun Xue

摘要:

本文报道了用低温扫描隧道显微镜对分子束外延生长的Sb_2Te_3薄膜进行朗道量子化的实验观察。与以往文献报道的体系不同,Sb_2Te_3拓扑绝缘体中的朗道量子化对薄膜中的本征替位缺陷不敏感。结果表明,二维无质量狄拉克费米子系统的表面态具有近似理想的线性能量色散。我们证明了Sb_2Te_3薄膜作为三维拓扑绝缘体的厚度极限为4个五层。朗道能级展宽的机制进行了讨论,增强准粒子寿命。

英文摘要:

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as 2D massless Dirac fermion system is achieved. We demonstrate that 4 quintuple layers are the thickness limit for Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau level broadening is discussed in terms of enhanced quasiparticle lifetime.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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