硅中29Si核自旋光激发三重态的相干存储
Coherent storage of photoexcited triplet states using 29Si nuclear spins in silicon
摘要：
脉冲电子顺磁共振光谱的光激发，亚稳态三重态的氧空位中心在硅中揭示了ms = \pm 1子能级的寿命从ms =0状态的显着不同。我们利用这种显着的差异，在地面单重态的衰变率，以实现近100%的三重态内的电子自旋极化。我们进一步证明了转移的三重态电子自旋的相干态，并从一个超精细耦合，最近邻29 Si核自旋。我们测量了该操作中使用的29 Si核自旋的相干时间，发现它不受三重态电子自旋存在的影响，并且等于通过核磁共振测量的体值。
英文摘要：
Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of the ms = \pm1 sub-levels differ significantly from that of the ms =0 state. We exploit this significant difference in decay rates to the ground singlet state to achieve nearly ~100% electron spin polarization within the triplet. We further demonstrate the transfer of a coherent state of the triplet electron spin to, and from, a hyperfine-coupled, nearest-neighbor 29Si nuclear spin. We measure the coherence time of the 29 Si nuclear spin employed in this operation and find it to be unaffected by the presence of the triplet electron spin and equal to the bulk value measured by nuclear magnetic resonance.
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