Structural and Electronic Properties of Graphene and Silicene: An FP-(L)APW+lo Study
Harihar Behera, Gautam Mukhopadhyay
备注：
Presented in the International Conference on Physics of Emerging Functional Materials (PEFM-2010), 22-24 Sept. 2010, Mumbai, India; Eds. Dinesh K. Aswal and Anil K. Debnath, AIP Conf. Proc. 1313 (2010) 152-155. 4 figures, typographic errors in published version rectified
We report here the structural and electronic properties of graphene and silicene (silicon analogue of graphene) investigated using first-principles calculations of their ground state energies employing full-potential (linearized) augmented plane wave plus local orbital (FP-(L)APW+lo) method. On structure optimization, we found that the graphene-like honeycomb structure of Si is buckled (buckling parameter $Δ= 0.44$ Åin constrast with graphene whose structure is planar ($Δ= 0.0$ Å). In spite of the buckled-structure, silicene has an electronic structure similar to that of graphene. The results are in agreement with previous reports based on other methods. We have also calculated the lower bounds of the lattice constant $"a"$ of these 2D systems, within the present method of study which are our new results.
Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices can be integrated via graphene-silicene (Gra/si) hybrid structures. These electronic applications are mostly based on the ability to tune the bandgap via electronic structure deformation that is expected to be achieved by multilayer stacking, applying a transverse external electric field (EF), and altering interfacial distance. In this work, we investigate t…
The effects of biaxial strain on the impurity-induced magnetism in P-doped graphene (P-graphene) and N-doped silicene (N-silicene) are studied by means of spin-polarized density functional calculations, using the supercell approach. The calculations were performed for three different supercell sizes $4\times 4$, $5\times 5$, and $6\times 6$, in order to simulate three different dopant concentrations 3.1, 2.0 and 1.4 %, respectively. For both systems, the calculated magnetic moment is 1.0 $μ_B$ per impurity atom for the three studied concentrations. From the analysis of the electronic structure…
The success of graphene for nanopore DNA sequencing has shown that it is possible to explore other potential single-atom and few-atom thick layers of elemental 2D materials beyond graphene (e.g., phosphorene and silicene). Using density functional theory, we studied the interaction of DNA bases with nanopores created in finite-size nanoribbons from graphene, phosphorene, and silicene. We observe that binding energies of DNA bases using nanopores from phosphorene and silicene are generally smaller compared to graphene. The band gaps of phosphorene and silicene are significantly altered due to i…
The power loss $P$ of hot Dirac fermions through the coupling to the intrinsic intravalley and intervalley acoustic and optical phonons is analytically investigated in silicene as a function of electron temperature $T_e$ and density $n_s$. At very low $T_e$, the power dissipation is found to follow the Bloch-Grüneisen power-law $\propto T_e^4$ and $n_s^{-0.5}$, as in graphene, and for $T_e \lesssim20-30$ K, the power loss is predominantly due to the intravalley acoustic phonon scattering. On the other hand, dispersionless low energy intervalley acoustic phonons begin to dominate the power tran…
The band modulation of the silicene and graphene quantum dots is investigated by a first-principles method. This study includes the ordinary silicene and graphene quantum dots and the embedded quantum dots in the hydrogenated silicene and graphene. The shapes and sizes of quantum dots are recognized as important factors for the electronic properties. We studied several types of quantum dots: triangular, parallelogram, rectangular, hexagonal dots. It demonstrates the energy gap of the quantum dot can be tuned by the dot size, the larger of the dot the smaller the energy gap. Moreover, the shape…
Elastic and plastic deformation of graphene, silicene, and boron nitride honeycomb nanoribbons under uniaxial tension: A first-principles density-functional theory study
本研究的弹性和塑性形变的石墨烯，硅烯，氮化硼（BN）蜂窝纳米带在单轴拉伸下确定其弹性常数，并揭示有趣的功能。在弹性范围内的拉伸过程中，电子和磁性可以强烈地改变。特别是，它示出的带隙的一个特定的扶手椅nanoriginates在应变和最高价和最低的导带被线性化下被关闭。这样，即使在半导体纳米晶体中也可以获得无质量的狄拉克费米子行为。在塑性形变下，蜂窝结构不可逆地改变，并提供许多新的结构和功能。笼状结构，甚至悬浮的原子链可以在两个蜂窝状薄片之间衍生。本工作阐述了最近的实验[C. Jin，H.兰湖，澳-地彭，K. Suenaga和S. Iijima，Phys. Rev. Lett. 102，205501（2009）]，从石墨烯衍生碳链。此外，从BN和Si纳米带的原子链的类似的形成进行了预测。
The ability to detect and discriminate DNA bases by reading it directly using simple and cost-effective methods is an important problem whose solution can produce significant value for areas such as cancer and human genetic disorders. Two-dimensional (2D) materials have emerged as revolutionary materials for electronic DNA sequencing with strong potentials for fast, single-nucleotide direct-read DNA sequencing with a minimum amount of consumables. Among 2D materials, graphene is the most explored for DNA sequencing. This is due to its commercial availability. The major hindrance of graphene is…
The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoret…
We consider observation of Aharonov-Bohm oscillations in clean systems based on the flow of topologically protected currents in silicene and bilayer graphene. The chiral channels in these materials are defined by the flips of the vertical electric field. The line of the flip confines chiral currents flowing along it in the direction determined by the valley. We present an electric field profile that forms a crossed ring to which four terminals can be attached, and find that the conductance matrix elements oscillate in the perpendicular magnetic field in spite of the absence of backscattering. …
The main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Greens function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an alm…
We perform a systematic {\it ab initio} study of the work function and its uniform strain dependence for graphene and silicene for both tensile and compressive strains. The Poisson ratios associated with armchair and zigzag strains are also computed. Based on these results, we obtain the deformation potential, crucial for straintronics, as a function of the applied strain. Further, we propose a particular experimental setup with a special strain configuration that generates only the electric field, while the pseudomagnetic field is absent. Then, applying a real magnetic field, one should be ab…
Spin to pseudo-spin conversion by which spin population imbalance converts to non-equilibrium pseudo-spin density in Dirac systems has been investigated particularly for graphene and insulator phase of silicene. Calculations have been performed within the Kubo approach and by taking into account the vertex correction. Results indicate that spin converts to pseudo-spin in either graphene or silicene that identified to come from the spin-orbit interactions. The response function of spin to pseudo-spin conversion is weakened several orders of magnitude by vertex correction of impurities in graphe…
We present the ballistic quantum transport of a p-n-p bilayer silicene junction in the presence of spin-orbit coupling and electric field using a four-band model in combination with the transfer-matrix approach. A Mexican-hat shape of the low-energy spectrum is observed similarly to bilayer graphene under an interlayer bias. We show that while bilayer silicene shares some physics with bilayer graphene, it has many intriguing phenomena that have not been reported for the latter. First, the confined state producing a significantly non-zero transmission in Mexican hat. Second, the cloaking of the…
We investigate the semiclassical electronic transport properties of the bilayer silicene-like system in the presence of charged impurity. The trigonal warping due to the interlayer hopping, and its effect to the band structure of bilayer silicene is discussed. Besides the trigonal warping, the external field also gives rise to the anisotropic effect of the mobility (at finite temperature) which can be explored by the Boltzmann theory. The dynamical polarization as well as the scattering wave vector-dependent screening within random phase approximation are very important in determining the scat…
This article presents a design for the two-dimensional heterostructure (2DH) systems of graphane quantum dot array in graphane (GQD/Graphane), and silicene quantum dot array in silicane (SiQD/Silicane). A first-principles method was used to evaluate the deformation effect for magnetism as well as the electronic properties for the 2DH systems. The energy levels of quantum dot (QD) array and the band structure of its hydrogenated counterpart are coupling for both 2DH systems of C and Si. The hydrogenated part shares part of strain on QD array, however, the strain sharing effect is stronger in Si…
Silicon is one of the most frequently used chemical elements of the periodic table in nanotechnology. Two-dimensional (2D) silicene, a silicon analog of graphene, has been readily obtained to make field-effect transistors since 2015. Recently, as new members of the silicene family, penta-silicene and its nanoribbon have been experimentally grown on Ag(110) surface with exotic electronic properties. However, the thermoelectric performance of penta-silicene has not been so far studied that would hinder its potential applications of electric generation from waste heat and solid-state Peltier cool…
Graphene, Silicene, $\mathrm{MoS}_2$ and other similar two-dimensional structures have unusual electronic properties that lend themselves to exotic device applications. These properties emanate from the fact that the electrons are endowed with Dirac fermion-like attributes. Thus these materials are not only characterized by certain fundamental principles, they also have amazing practical uses. Our emphasis here is on one such basic property concerning nonlinear response to time-dependent electric fields. We set up a first principle quantum master equation for the underlying density operator wh…
Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient conditions was observed for silicene and phosphorene with subsequent reduction of the mobility of charge carriers, nanodevices with active channels of indium selenide, bismuth chalcogenides and transition-metal dichalcogenides are stable in air. However, air-exposed indium selenide suffers of p-type doping due to water decomposition on Se vacancies, whe…
