低温下BZO纳米棒在REBCO薄膜中引入的弱不相关钉扎的重要作用
On the large role of weak uncorrelated pinning introduced by BZO nanorods at low temperatures in REBCO thin films
摘要：
REBa $_{2}$ Cu $_{3}$ O $_{x}$薄膜通过引入绝缘纳米颗粒可以获得非常高的临界电流密度值。一个特别有趣的情况涉及BaZrO $_{3}$（BZO）纳米棒，在高温下观察到其强烈的相关效应。本文研究了在4.2 K ~ 77 K的温度范围内，磁场高达31 T时，临界电流密度随磁场、温度和角度的变化关系。我们发现，相关的c轴钉扎BZO纳米棒变得越来越不明显，在较低的温度。事实上，在4.2 K和字段高达31 T，唯一的相关钉扎是平行于膜平面的字段。我们解释的变化是由于密集的，但薄弱的引脚，热波动使在高温下无效，但在较低的温度下变得强大的显着贡献。
英文摘要：
REBa$_{2}$Cu$_{3}$O$_{x}$ films can achieve remarkably high critical current density values by the incorporation of insulating nanoparticles. A particular interesting case concerns BaZrO$_{3}$ (BZO) nanorods, whose strongly correlated effect is seen at high temperatures. Here we investigate the field, temperature and angular dependence of the critical current density over a wide temperature range from 4.2 K to 77 K, and magnetic fields up to 31 T. We show that the correlated c-axis pinning of BZO nanorods becomes progressively less obvious at lower temperature. Indeed at 4.2 K and fields up to 31 T, the only correlated pinning is for fields parallel to the film plane. We interpret the change as being due to significant contributions from dense but weak pins that thermal fluctuations render ineffective at high temperatures but which become strong at lower temperatures.
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