用硬X射线光电子能谱学研究外延NiTiSn和NiZr $_{0.5}$ Hf $_{0.5}$ Sn薄膜的电子结构和价态对称性
Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn thin films by hard x-ray photoelectron spectroscopy
摘要：
用偏振相关硬X射线光电子能谱学研究了NiTiSn和$_{0.5}$组成的Heusler化合物薄膜和超晶格的电子能带结构。线性二色性允许区分不同类型的层状结构的价态的对称性。与体样品相比，膜表现出更大量的{ \it“间隙内”}状态。结果表明，以NiTiSn为起始层生长的薄膜和超晶格具有接近体材料的电子结构。
英文摘要：
The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of {\it "in-gap"} states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.
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