亚微米平面金属/氧化物/石墨烯结隧穿态密度的温度依赖性
Temperature dependance of the tunneling density of states in sub-micron planar metal / oxide / graphene junctions
摘要：
我们提出了亚微米金属/绝缘体/石墨烯平面隧道结的隧穿测量到室温。我们观察到了一个与栅极无关的能隙，这是以前只能通过低温STM观察到的。Zhang等人，4，627（2008）]。在150 K以上没有能隙出现，这比从公认的平均场模型[T. O. Wehling等人，Phys. Rev. Lett. 101，216803（2008）]。我们表明，考虑到一个额外的振动效应的面外声子软模式的间隙可能会消失，从测量温度远低于计算的$T_{c}$。
英文摘要：
We present tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM[Y. Zhang et al., Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150K, which is four times smaller than the theoretically expected $T_{c}$, from the accepted mean field model[T. O. Wehling et al. Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated $T_{c}$.
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